PART |
Description |
Maker |
IRFSL4310ZTRLPBF IRFSL4310ZTRRPBF |
75 A, 100 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
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BUK9506-30 |
TrenchMOS transistor Logic level FET 75 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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SD1208-50-5 |
CAP AND SAFETY CHANN, BNC
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Winchester Electronics Corporation
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STB70NF02L -STB70NF02L |
N-CHANNEL 20V - 0.006 OHM - 70A D2PAK LOW GATE CHARGE STripFET POWER MOSFET N沟道20V 0.006欧姆-0A D2PAK封装,低栅极电荷STripFET功率MOSFET
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STMicroelectronics N.V.
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S29GL064M90FBIR00 S29GL064M90FCIR02 S29GL064M90FCI |
MOSFET, Switching; VDSS (V): 300; ID (A): 88; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.042; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5000; toff (µs) typ: -; Package: TO-3P MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 90; RDS (ON) typ. (ohm) @10V: 0.0046; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2500; toff (µs) typ: 0.07; Package: TO-220AB MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (S)- (2) MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (L) MOSFET, Switching; VDSS (V): 150; ID (A): 70; Pch : -; RDS (ON) typ. (ohm) @10V: 0.022; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5100; toff (µs) typ: -; Package: TO-3P MOSFET, Switching; VDSS (V): 200; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.036; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN MOSFET, Switching; VDSS (V): 200; ID (A): 96; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4900; toff (µs) typ: 0.22; Package: TO-3P MOSFET, Switching; VDSS (V): 290; ID (A): 18; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.07; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN MOSFET, Switching; VDSS (V): 230; ID (A): 35; Pch : -; RDS (ON) typ. (ohm) @10V: 0.03; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5200; toff (µs) typ: -; Package: TO-3PFM MOSFET, Switching; VDSS (V): 300; ID (A): 40; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.058; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5150; toff (µs) typ: 0.22; Package: TO-3P 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 3.0伏只页面模式闪存具有0.23微米工艺技术的MirrorBit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PBGA64 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 16M X 16 FLASH 3V PROM, 100 ns, PDSO56 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 16 FLASH 3V PROM, 90 ns, PDSO56 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 8 FLASH 3V PROM, 90 ns, PBGA63 MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.008; RDS (ON) typ. (ohm) @4V[4.5V]: 0.013 (5V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff (µs) typ: 0.055; Package: LDPAK (L)
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Spansion Inc. Spansion, Inc. SPANSION LLC
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RJK0351DPA10 RJK0351DPA-00-J0 |
Silicon N Channel Power MOS FET Power Switching 40 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8
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Renesas Electronics Corporation
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STD70N2LH5 STU70N2LH5 |
N-channel 25 V, 0.006 Ω, 48 A - DPAK - IPAK STripFET V Power MOSFET N-channel 25 V, 0.006 ヘ, 48 A - DPAK - IPAK STripFET⑩ V Power MOSFET N-channel 25 V, 0.006 楼?, 48 A - DPAK - IPAK STripFET垄芒 V Power MOSFET N-channel 25 V, 0.006 Ω, 48 A - DPAK - IPAK STripFET?/a> V Power MOSFET
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STMicroelectronics http://
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756-19-7 SD756-21-7 |
PLUG, ANG, BNC ,M39012/20-006
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Vitesse Semiconductor Corporation Winchester Electronics Corporation
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STL11N3LLH6 |
N-channel 30 V, 0.006 typ., 11 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT 3.3 x 3.3 package
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STMicroelectronics
|
TS53YL500OHM/-20TR TS53YL50OHM/-20TR TS53YL20OHM/- |
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 500 ohm RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 50 ohm RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 20 ohm RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 1000 ohm RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 10 ohm RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 5000 ohm RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 500000 ohm RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 100000 ohm RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 10000 ohm RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 20000 ohm RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 200000 ohm RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 200 ohm RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 100 ohm RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 1000000 ohm RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 2000 ohm RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 50000 ohm
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Vishay Intertechnology, Inc.
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STL30NF3LL |
N-CHANNEL 30V 0.006 OHM 30A POWERFLAT LOW GATE CHARGE STRIPFET II MOSFET N-CHANNEL 30V - 0.008ohm - 30A PowerFLAT⑩ LOW GATE CHARGE STripFET⑩ MOSFET N-CHANNEL 30V 0.0055 OHM 28A POWERFLAT LOW GATE CHARGE STRIPFET II MOSFET N-CHANNEL 30V - 0.008ohm - 30A PowerFLAT LOW GATE CHARGE STripFET MOSFET
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
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